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T. Pavelka
Observed names:
T Pavelka,
Tibor PAVELKA,
Tibor Pavelka,
Tibor Pavelka Tibor Pavelka
Institution:
Semilab (Hungary)
Observed institutions:
Centre National de la Recherche Scientifique,
National and Kapodistrian University of Athens,
Ibs (France),
Semilab (Hungary),
Hungarian Academy of Sciences
OpenAlex ID:
A5111762310
In situ bulk lifetime measurement on silicon with a chemically passivated surface
1993
·
T.S. Horányi
, T. Pavelka
, et al.
·
Elsevier eBooks
·
142
Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon
1988
·
G. Ferenczi
, C. A. Londos
, et al.
·
Journal of Applied Physics
·
60
Isothermal frequency scan DLTS
1986
·
G. Ferenczi
, J. Boda
, et al.
·
physica status solidi (a)
·
50
Silicon epitaxial layer recombination and generation lifetime characterization
2003
·
D.K. Schroder
, B.D. Choi
, et al.
·
IEEE Transactions on Electron Devices
·
33
Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay
2005
·
H. Väinölä
, E. Saarnilehto
, et al.
·
Applied Physics Letters
·
31
PDF
Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon
1991
·
George Ferenczi
, Tibor Pavelka Tibor Pavelka
, et al.
·
Japanese Journal of Applied Physics
·
17
PDF
Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques
1998
·
T Pavelka
·
9
Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
2010
·
J. L. Everaert
, E. Rosseel
, et al.
·
Applied Physics Letters
·
8
Comparative study on emitter sheet resistivity measurements for inline quality control
2003
·
E. Ruland
, P. Fath
, et al.
·
World Conference on Photovoltaic Energy Conversion
·
8
Carrier Lifetime Analysis by Photoconductance Decay and Free Carrier Absorption Measurements
2001
·
H.-J. Schulze
, A. Frohnmeyer
, et al.
·
Journal of The Electrochemical Society
·
8
PDF
Ballistic electron emission microscopy of Schottky diodes on RF-plasma-treated silicon
1993
·
Lidia Quattropani
, Katalin Solt
, et al.
·
Applied Surface Science
·
8
Carrier Lifetime Measurements in Silicon for Photovoltaic Applications
2007
·
Tibor Pavelka
, Aron Pap
, et al.
·
ECS Transactions
·
7
PDF
Metrology and High Resolution Mapping of Shallow Junctions Formed by Low Energy Implant Processes
2006
·
Eric Don
, Aron Pap
, et al.
·
AIP conference proceedings
·
6
Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage
2017
·
Ping Li
, Hengjing Tang
, et al.
·
Journal of Electronic Materials
·
5
Investigation of deep levels and precipitates related to molybdenum in silicon by DLTS and scanning infrared microscopy
2000
·
A Sandhu
, T Ogikubo
, et al.
·
Journal of Crystal Growth
·
5
22nm node p+ USJ defect analysis with various PAI and HALO structures using laser annealing
2010
·
John Borland
, Milkos Tallian
, et al.
·
International Conference on Advanced Thermal Processing of Semiconductors
·
3
Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance
2010
·
JL. Everaert
, E. Rosseel
, et al.
·
ECS Transactions
·
3
PDF
Junction Photovoltage Metrology and High Resolution Mapping of Ion Implants Electrically Isolated from the Wafer Surface
2008
·
Ferenc Korsós
, Krisztian Kis-Szabo
, et al.
·
AIP conference proceedings
·
3
Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods
2005
·
Marko Yli-Koski
, Hele Savin
, et al.
·
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
·
3
Investigation of Recombination Properties of Ti Double Donor in Si
1993
·
G. Ferenczi
, T. Pavelka
, et al.
·
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
·
3
Dispersive microwave transient spectroscopy of deep levels in semiconductors
1989
·
D. Huber
, P. Eichinger
, et al.
·
Materials Science and Engineering B
·
3
Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime using the Microwave Photo-conductive Decay (μ-PCD) coupled with Continuous Corona Charge (Charge-PCD)
2009
·
Tibor Pavelka
, Aron Pap
, et al.
·
ECS Transactions
·
2
PDF
Control of laser induced interface traps with in-line corona charge metrology
2008
·
J-L. Everaert
, E. Rosseel
, et al.
·
International Conference on Advanced Thermal Processing of Semiconductors
·
2
Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal Processing
2008
·
Frank Torregrosa
, Hasnaa Etienne
, et al.
·
AIP conference proceedings
·
2
Monitoring plasma nitridation of HfSiOx by corona charge measurements
2007
·
J-L. Everaert
, X. Shi
, et al.
·
Microelectronic Engineering
·
2
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Works count:
47
Citation count:
440
H-index:
8
I10-index:
6
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