Test Structure Design Considerations for RF-CV Measurements on Leaky Dielectrics
Year: 2004
Type: article
Abstract: We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
Institutions: University of Twente, Philips (Netherlands)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2159267338