Work

Comparison of damage created by a chemical downstream etcher and plasma-immersion system in metal–oxide–semiconductor capacitors

Year: 1996

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.588434

Authors: Tomasz Brożek, Thuy Dao, Chand R. Viswanathan

Institution: University of California, Los Angeles

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2145445238

FWCI:

Cites:

Cited by: 1

Related to: 10