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Thuy Dao

Observed name: T. Dao
OpenAlex ID: A5111236831
Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions
2004 · A. Vandooren, A.V.Y. Thean, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
Through Silicon Via stress characterization
2009 · Thuy Dao, Dina H. Triyoso, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 25
Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
2011 · Ryan P. Koseski, William A. Osborn, et al. · Journal of Applied Physics · 21
Effect of device type and plasma process on the oxide thickness dependence of plasma-induced charging damage
2002 · T. Brozek, T. Dao · International Symposium on Plasma Process-Induced Damage · 10
Thermo-mechanical stress characterization of tungsten-fill through-silicon-via
2010 · Thuy Dao, Dina H. Triyoso, et al. · International Symposium on VLSI Design, Automation and Test · 8
Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO/sub 2/) gate dielectric
2004 · A.V.-Y. Thean, A. Vandooren, et al. · Symposium on VLSI Technology · 7
International Conference on IC Design & Technology
2009 · Koji Eriguchi, A Sub, et al. · 6
Charging of Underlayer at Via Etch causing Slow Down in Oxide Etch Rate
2005 · Thuy Dao, Wei Wu · International Symposium on Plasma Process-Induced Damage · 5
Through-Silicon-Via stress 3D modeling and design
2010 · Thuy Dao, Vance Adams · IEEE International Conference on IC Design and Technology (ICICDT) · 4
Thermo-mechanical stress characterization of tungsten-fill through-silicon-via
2010 · Thuy Dao, Dina H. Triyoso, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 4
Industry Trend: Planar Double Gate Technology
2006 · T. Dao, P. Montgomery, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 4
Advanced double-gate fully-depleted silicon-on-insulator (DG-FDSOI) device and device impact on circuit design & power management
2004 · T. Dao · IEEE International Conference on IC Design and Technology (ICICDT) · 4
In-line testing of antenna-type test structures for separation of sources of process-induced damage
1997 · Tomasz Brozek, Douglas Roberts, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Improved deep trench isolation breakdown voltage for SmartMOS
2013 · Thuy Dao, Todd Roggenbauer, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 3
Evaluation of non-destructive etch depth measurement for through silicon vias
2012 · Thuy Dao, Tania Thomas, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 3
Integration challenges of new materials and device architectures for IC applications
2004 · Bich-Yen Nguyen, A. Thean, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 2
Process induced damages from various integrated circuit interconnection designs - limitations of antenna rule under practical integrated circuit layout practice
2003 · J. Mercier, T. Dao, et al. · International Symposium on Plasma Process-Induced Damage · 2
Characterization of onset tunneling voltage (Vonset) walkout in high-voltage deep trench isolation on SOI
2015 · Thuy Dao, Mu-Ling Ger, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 1
Metal gate effects on a 32 nm metal gate resistor
2008 · Thuy Dao, Ik_Sung Lim, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 1
Tantalum-based Gate Electrode Metals for Advanced CMOS Applications
2006 · Jacob Hooker, Robert Lander, et al. · ECS Meeting Abstracts · 1
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Process induced damage: what challenges lie ahead?
2003 · T. Dao · International Symposium on Plasma Process-Induced Damage · 1
Comparison of damage created by a chemical downstream etcher and plasma-immersion system in metal–oxide–semiconductor capacitors
1996 · Tomasz Brożek, Thuy Dao, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1
STI fill effect on poly-poly comb IL
2014 · Thuy Dao, Todd Roggenbauer, et al. · IEEE International Conference on IC Design and Technology (ICICDT)
Metal Gate Effects on a 32 nm Metal Gate Resistor
2010 · Thuy Dao, Ik_Sung Lim, et al. · Lecture notes in electrical engineering
Transistor Leakage Components & Effect of Leakage on VCO performance
2007 · Thuy Dao, Phil Dahl, et al. · IEEE International Conference on IC Design and Technology (ICICDT)
Works count: 29
Citation count: 144
H-index: 6
I10-index: 4
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