Work

Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor

Year: 1997

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.585552

Authors: V. Ferlet-Cavrois, O. Musseau, J.-L. Leray, J.-L. Pelloie, C. Raynaud

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2145809257

FWCI: 1.443

Cites: 25

Cited by: 33

Related to: 10