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O. Musseau
Observed names:
Musseau, O,
Musseau, O.,
Musseau, Olivier,
O Musseau,
Olivier MUSSEAU,
Olivier Musseau
show all 6
Observed institutions:
Université Paris-Sud,
Centre National de la Recherche Scientifique,
Commissariat à l'Énergie Atomique et aux Énergies Alternatives,
CEA DAM Île-de-France,
Direction des Energies
OpenAlex ID:
A5028078057
Worst-case bias during total dose irradiation of SOI transistors
2000
·
V. Ferlet-Cavrois
, T. Colladant
, et al.
·
IEEE Transactions on Nuclear Science
·
140
PDF
Single-event effects in SOI technologies and devices
1996
·
O. Musseau
·
IEEE Transactions on Nuclear Science
·
123
Heavy ion and proton-induced single event multiple upset
1997
·
R.A. Reed
, M.A. Carts
, et al.
·
IEEE Transactions on Nuclear Science
·
103
Impact of ion energy on single-event upset
1998
·
P.E. Dodd
, O. Musseau
, et al.
·
IEEE Transactions on Nuclear Science
·
92
Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
1996
·
C. Brisset
, V. Ferlet-Cavrois
, et al.
·
IEEE Transactions on Nuclear Science
·
92
Analysis of multiple bit upsets (MBU) in CMOS SRAM
1996
·
O. Musseau
, F. Gardic
, et al.
·
IEEE Transactions on Nuclear Science
·
78
From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena
1988
·
J.L. Leray
, E. Dupont-Nivet
, et al.
·
IEEE Transactions on Nuclear Science
·
69
Total dose induced latch in short channel NMOS/SOI transistors
1998
·
V. Ferlet-Cavrois
, S. Quoizola
, et al.
·
IEEE Transactions on Nuclear Science
·
60
Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors
2000
·
O. Musseau
, V. Ferlet-Cavrois
, et al.
·
IEEE Transactions on Nuclear Science
·
53
Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation
2002
·
V. Ferlet-Cavrois
, C. Marcandella
, et al.
·
IEEE Transactions on Nuclear Science
·
52
A study of radiation vulnerability of ferroelectric material and devices
1994
·
Y.M. Coic
, O. Musseau
, et al.
·
IEEE Transactions on Nuclear Science
·
51
Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics
1993
·
M. Dentan
, E. Delagnes
, et al.
·
IEEE Transactions on Nuclear Science
·
44
DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics
1996
·
M. Dentan
, P. Abbon
, et al.
·
IEEE Transactions on Nuclear Science
·
43
SEU in SOI SRAMs-a static model
1994
·
O. Musseau
, J.L. Leray
, et al.
·
IEEE Transactions on Nuclear Science
·
35
Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor
1997
·
V. Ferlet-Cavrois
, O. Musseau
, et al.
·
IEEE Transactions on Electron Devices
·
33
Comparison of the sensitivity to heavy ions of 0.25-/spl mu/m bulk and SOI technologies
2002
·
G. Gasiot
, V. Ferlet-Cavrois
, et al.
·
IEEE Transactions on Nuclear Science
·
32
Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions
1991
·
O. Musseau
, J.L. Leray
, et al.
·
IEEE Transactions on Nuclear Science
·
26
Radiation Effects in Thin-Film Ferroelectric PZT for Non-Volatile Memory Applications in Microelectronics
1997
·
Jean-Luc Leray
, Olivier Musseau
, et al.
·
Journal de Physique III
·
21
Enhanced total dose damage in junction field effect transistors and related linear integrated circuits
1996
·
O. Flament
, J.L. Autran
, et al.
·
IEEE Transactions on Nuclear Science
·
20
Technique to measure an ion track profile
1998
·
O. Musseau
, V. Ferlet-Cavrois
, et al.
·
IEEE Transactions on Nuclear Science
·
19
Comparison of the sensitivity to heavy ions of SRAM's in different SIMOX technologies
1994
·
V. Ferlet-Cavrois
, O. Musseau
, et al.
·
IEEE Electron Device Letters
·
18
Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology
1994
·
L. Blanquart
, P. Delpierre
, et al.
·
IEEE Transactions on Nuclear Science
·
17
Analysis of local and global transient effects in a CMOS SRAM
1996
·
F. Gardic
, O. Musseau
, et al.
·
IEEE Transactions on Nuclear Science
·
15
Theoretical study of SEUs in 0.25-/spl mu/m fully-depleted CMOS/SOI technology
1994
·
C. Brisset
, P. Dollfus
, et al.
·
IEEE Transactions on Nuclear Science
·
15
Field dependent charge trapping effects in SIMOX and buried oxides at very high dose
1992
·
O. Flament
, D. Herve
, et al.
·
IEEE Transactions on Nuclear Science
·
15
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Works count:
103
Citation count:
1,543
H-index:
19
I10-index:
32
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