Work

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Year: 2010

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2010.2048992

Institutions: IBM (United States), IBM Research - Thomas J. Watson Research Center, GlobalFoundries (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2146705371

FWCI: 2.232

Cites: 17

Cited by: 61

Related to: 10