Work

Gate insulating layer impact on the extension profile of the sub-50 nm p-MOSFET

Year: 2002

Type: conference-paper

Source: International Workshop on Junction Technology

DOI: 10.1109/iwjt.2002.1225198

Authors: H. Fukutome, H. Arimoto, S. Watanabe, H. Ohta, M. Hori

Institution: Fujitsu (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2149358128

FWCI:

Cites: 5

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Related to: 10