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Mitsuaki Hori

Observed name: M. Hori
OpenAlex ID: A5082353237
Advanced channel engineering achieving aggressive reduction of VT variation for ultra-low-power applications
2011 · K. Fujita, Y. Torii, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 59
Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films
2005 · S. Shinagawa, H. Nohira, et al. · Microelectronic Engineering · 27
A highly integrated 65-nm SoC process with enhanced power/performance of digital and analog circuits
2012 · L. T. Clark, D. Zhao, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
High performance 25 nm gate CMOSFETs for 65 nm node high speed MPUs
2004 · K. Goto, Y. Tagawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
Angle-resolved photoelectron spectroscopy on gate insulators
2006 · T. Hattori, H. Nohira, et al. · Microelectronics Reliability · 13
Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50 nm N-MOSFET by Scanning Tunneling Microscopy
2004 · Hidenobu Fukutome, Takashi Saiki, et al. · Japanese Journal of Applied Physics · 8
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Low power ARM® Cortex™-M0 CPU and SRAM using Deeply Depleted Channel (DDC) transistors with Vdd scaling and body bias
2013 · V. Agrawal, N. Kepler, et al. · Custom Integrated Circuits Conference · 6
High Drive Current NMOS With Si–SiGe Heterostructure Low Electric Field Channel
2004 · M. Shima, A. Hatada, et al. · IEEE Electron Device Letters · 4
Embedded FLOTOX flash on ultra-low power 55nm logic DDC platform
2013 · M. Hori, K. Fujita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Sub-Nm Screening Layer Approach for Ultra Shallow Junction Formation
1999 · M. Hori, T. Miyake, et al. · MRS Proceedings · 3
Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement
2010 · Tsunehisa Sakoda, Keita Nishigaya, et al. · IEEE International Reliability Physics Symposium proceedings · 2
Formation of ultra-shallow junction by BF/sub 2//sup +/ implantation and spike annealing
2002 · T. Kubo, M. Hori, et al. · International Conference on Ion Implantation Technology · 1
Effect of plasma properties on characteristics of silicon nitride film deposited by PECVD process at low temperature
2016 · Jeon G. Han, Jun S. Lee, et al. · 한국진공학회 학술발표회초록집
Synthesis of SiNx:H films in PECVD using RF/UHF hybrid sources
2015 · K. S. Shin, Bibhuti B. Sahu, et al. · 한국진공학회 학술발표회초록집
Low Temperature Synthesis of Silicon Nitride Thin Film by UHFAssisted RF PECVD
2014 · K.S. Shin, B.B. Sahu, et al. · SVC ... Annual Technical Conference proceedings - Society of Vacuum Coaters. Technical Conference/Proceedings of the annual technical conference/Society of Vacuum Coaters Technical Conference proceedings
Depth Profile of Various Bonding Configration of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation
2007 · Hiroshi Nohira, Seiji Shinagawa, et al. · International Conference on Solid State Devices and Materials (SSDM)
Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50nm N-MOSFET by Scanning Tunneling Microscopy
2003 · Hidenobu Fukutome, Takashi Saiki, et al. · International Conference on Solid State Devices and Materials (SSDM)
A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide
2003 · Mitsuaki Hori, Naoyoshi Tamura, et al. · MRS Proceedings
Gate insulating layer impact on the extension profile of the sub-50 nm p-MOSFET
2002 · H. Fukutome, H. Arimoto, et al. · International Workshop on Junction Technology
Works count: 19
Citation count: 171
H-index: 6
I10-index: 5
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