Work

A 400GHz fMAX fully self-aligned SiGe:C HBT architecture

Year: 2009

Type: conference-paper

Abstract: An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAXvalue of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.

Source: IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

DOI: 10.1109/bipol.2009.5314244

Authors: S. Van Huylenbroeck, A. Sibaja-Hernandez, R. Venegas, S. You, G. Winderickx, D. Radisic, W. Lee, P. Ong, T. Vandeweyer, N. D. Nguyen, K. De Meyer, S. Decoutere

Institutions: IMEC, KU Leuven

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2156263265

FWCI: 6.559

Cites: 4

Cited by: 22

Related to: 10