Work

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

Year: 2005

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2005.848107

Authors: J.S. Moon, Shihchang Wu, D. Wong, I. Milosavljevic, A. Conway, P. Hashimoto, M. Hu, M. Antcliffe, M. Micovic

Institutions: HRL Laboratories (United States), Boeing (United States), University of San Diego

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2158028263

FWCI: 8.534

Cites: 12

Cited by: 143

Related to: 10