Work

Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

Year: 2009

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2009.5424428

Authors: C. Ortolland, E. Rosseel, N. Horiguchi, C. Kerner, S. Mertens, J. Kittl, E. Verleysen, H. Bender, W. Vandervost, A. Lauwers, P.P. Absil, S. Biesemans, S. Muthukrishnan, S. Srinivasan, A.J. Mayur, R. Schreutelkamp, T. Hoffmann

Institutions: IMEC, Applied Materials (United States), KU Leuven

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2161497740

FWCI: 10.38

Cites:

Cited by: 31

Related to: 10