Work

Improvement of crystalline quality of GaAs P1−−N layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation

Year: 2003

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(02)02367-9

Authors: Kenji Momose, Hiroo Yonezu, Yuzo Furukawa, Atsushi Utsumi, Yusuke Yoshizumi, Sei Shinohara

Institution: Toyohashi University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2169749201

FWCI: 0.636

Cites: 19

Cited by: 7

Related to: 10