Work

Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii)

Year: 2009

Type: conference-paper

Abstract: Newly developed sweep beam Cluster ion implanter: CLARIS with 0.2-7keV energy range for Boron beam and 1-10keV energy range for Carbon beam is introduced. Novel Cluster ion implantation technology is capable for 45nm beyond device requiring USJ formation (<15nm) with high retain dose (>70%) and low sheet resistivity (<1200Ω/sq). Comparison of retain dose and sheet resistivity of B18, BF2, and B beams with FLA shows the superiority of the B18 implantation for less than 500eV implantation.

Source: ECS Transactions

DOI: 10.1149/1.3096572

Authors: Masayasu Tanjyo, Nariaki Hamamoto, Tsutomu Nagayama, Sei Umisedo, Yuji Koga, Noriaki Maehara, Hideyasu Une, Takao Matsumoto, Nobuo Nagai, John O. Borland

Institution: Nissin Ion Equipment Co., Ltd. (Japan)

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funder: Japan Science and Technology Agency

OpenAlex ID: W2321471279

FWCI:

Cites:

Cited by: 17

Related to: 10