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Nariaki Hamamoto

Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing
2010 · Kan Ukawa, Yasushi Kanda, et al. · Japanese Journal of Applied Physics · 28
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Single-, Double- and Triple-Electron Capture Cross Sections for Multicharged Slow Carbon Ions in H2, CH4, C2H6, C3H8and CO2Molecules
1995 · Akio Itoh, Nobutsugu Imanishi, et al. · Journal of the Physical Society of Japan · 21
Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii)
2009 · Masayasu Tanjyo, Nariaki Hamamoto, et al. · ECS Transactions · 17
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10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)
2016 · H. Tanimura, H. Kawarazaki, et al. · International Workshop on Junction Technology · 10
Production cross sections of recoil Ar ions in coincidence with final charge states of 2 MeV C3+projectiles
1995 · M Saito, Y Haruyama, et al. · Journal of Physics B Atomic Molecular and Optical Physics · 10
Germanium Junctions for Beyond-Si Node Using Flash Lamp Annealing (FLA)
2017 · H. Tanimura, H. Kawarazaki, et al. · MRS Advances · 9
High performance medium current ion implanter system EXCEED3000AH-G3
2006 · Shigeki Sakai, Masayasu Tanjyo, et al. · AIP conference proceedings · 9
Decaborane implantation with the medium current implanter
2005 · Nariaki Hamamoto, Sei Umisedo, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 9
Implantation characteristics by boron cluster ion implantation
2006 · Tsutomu Nagayama, Nariaki Hamamoto, et al. · AIP conference proceedings · 8
Development of ultra-high-current implanter for material modification process in next era devices
2023 · Hiroaki Kai, Yuya Uchida, et al. · MRS Advances · 6
Ion sources for ion implantation technology (invited)
2014 · Shigeki Sakai, Nariaki Hamamoto, et al. · Review of Scientific Instruments · 5
Beam Angular Divergence Effects in Ion Implantation
2008 · T. N. Horsky, M. I. Current, et al. · AIP conference proceedings · 5
Decaborane ion implantation for sub-40-nm gate-length PMOSFETs to enable formation of steep ultra-shallow junction and small threshold voltage fluctuation
2005 · T. Aoyama, M. Fukuda, et al. · International Workshop on Junction Technology · 5
A low energy plasma flood gun using RF plasma formation
2002 · S. Sakai, N. Hamamoto, et al. · International Conference on Ion Implantation Technology · 5
Cluster carbon implants — Cluster size and implant temperature effect
2011 · Karuppanan Sekar, Wade Krull, et al. · International Workshop on Junction Technology · 4
Performance of RF plasma flood gun for medium current implanter
2002 · N. Hamamoto, S. Sakai, et al. · International Conference on Ion Implantation Technology · 4
22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI
2009 · John Borland, Masayasu Tanjyo, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 3
Development of a Co-Axial Hot Cathode for Magnetized Ion Source Plasma
2008 · N. Miyamoto, N. Hamamoto, et al. · AIP conference proceedings · 3
A Beam Line System for a Commercial Borohydride Ion Implanter
2006 · H. F. Glavish, T. N. Horsky, et al. · AIP conference proceedings · 3
Nissin Ion Equipment Indirectly Heated Cathode Ion
2006 · Kohei Tanaka, Sei Umisedo, et al. · AIP conference proceedings · 3
Advantageous Decaborane Ion Implantation for Ultra-shallow Junction of PMOSFETs Compared with Boron Monomer Implantation into Germanium Preamorphized Layer
2006 · T. Aoyama, S. Umisedo, et al. · International Workshop on Junction Technology · 3
High-current metal ion source for material modification in the semiconductor manufacturing processes
2025 · T. Matsumoto, S. Hahto, et al. · MRS Advances · 2
The diffusion analysis of implanted heavy metals in 4H-SiC
2022 · Ryota Wada, Nariaki Hamamoto, et al. · MRS Advances · 2
A novel approach for highly activated p+ diffusion layer formation in germanium by pre-heating oxygen desorption before ion implantation
2017 · Tetsuya Igo, Takahiro Higuchi, et al. · International Workshop on Junction Technology · 2
Damage control with cluster ion implantation
2013 · Shigeki Sakai, Nariaki Hamamoto, et al. · International Workshop on Junction Technology · 2
Works count: 68
Citation count: 208
H-index: 8
I10-index: 5
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