Evaluation of Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate with Amorphization/Templated Recrystallization Method
Year: 2010
Type: conference-abstract
Authors: P. C. Huang, S. L. Wu, S. J. Chang, J. F. Chen, Y. T. Huang, D. G. Hong, C. Y. Chang, C. Y. Wu, C. T. Lin, M. Ma, O. Cheng
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2466514865