Work

The incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices

Year: 2007

Type: conference-abstract

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2006.f-7-1

Authors: Moon Sig Joo, Seung Ryong Lee, Hongseon Yang, Kwon Hong, Se-Aug Jang, Jaehyoung Koo, Jaemun Kim, Seungwoo Shin, Myungok Kim, Seungho Pyi, Nojung Kwak, Jin-Woong Kim

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2467449282

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