Work

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

Year: 2016

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782616110270

Authors: R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin

Institutions: Russian Academy of Sciences, Institute for Physics of Microstructures, Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR), Humboldt-Universität zu Berlin, N. I. Lobachevsky State University of Nizhny Novgorod

Language: English

Topic: Terahertz technology and applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Russian Foundation for Basic Research

OpenAlex ID: W2548849554

FWCI:

Cites: 19

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Related to: 10