Author

M. L. Orlov

Observed names: M L Orlov, M. L. ORLOV, M. Orlov, M.L. Orlov, Mikhail L. Orlov, Orlov, M.L., М.Л. Орлов

Institution: The Russian Presidential Academy of National Economy and Public Administration

Observed institutions: Centre National de la Recherche Scientifique, Oregon State University, Russian Academy of Sciences, The Russian Presidential Academy of National Economy and Public Administration, Nizhny Novgorod State Technical University, Institute for Physics of Microstructures, Université Montpellier 2, N. I. Lobachevsky State University of Nizhny Novgorod

OpenAlex ID: A5110144111

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors

2006 · F. Teppe, M. Orlov, et al. · Applied Physics Letters · 72

High-Resolution Coherent Raman Spectra of Vibrationally Excited14N2and15N2

1997 · M.L. Orlov, J.F. Ogilvie, et al. · Journal of Molecular Spectroscopy · 46

Plasma wave resonant detection of terahertz radiations by nanometric transistors

2007 · W. Knap, A. El Fatimy, et al. · Low Temperature Physics · 15

Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In0.53Ga0.47As/In0.52Al0.48As transistor

2009 · M. L. Orlov, L. K. Orlov · Semiconductors · 10

Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field

2005 · M.L. Orlov, Yu. A. Romanov, et al. · Microelectronics Journal · 8

Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method

2014 · L. K. Orlov, V. I. Vdovin, et al. · Journal of Structural Chemistry · 4

Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers

2008 · L. K. Orlov, Z. J. Horvath, et al. · Physics of the Solid State · 4

Electrical characteristics and the energy band diagram of the isotype n-Si1−x Gex/n-Si heterojunction in relaxed structures

2004 · L. K. Orlov, Zs. J. Horváth, et al. · Physics of the Solid State · 4

Excitation of drift motion of multiatomic molecules by resonance IR radiation

1980 · В. И. Баранов, Евгений Павлович Велихов, et al. · 3

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

2018 · M. L. Orlov, N. S. Volkova, et al. · Semiconductors · 2

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

2013 · L.K. Orlov, A.A.Mel’ nikova, et al. · Physica E Low-dimensional Systems and Nanostructures · 2

Tunneling and current characteristics of two-miniband superlattice

2012 · Yu. Yu. Romanova, M. L. Orlov, et al. · Semiconductors · 2

Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors

2009 · M. L. Orlov, A. N. Panin, et al. · Semiconductors · 2

Multilayer strained Si-SiGe structures: fabrication problems, interface characteristics, and physical properties

2003 · L. K. Orlov, Zsolt J. Horvath, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Characterization of Interface Layers of a Solid Solution Formed During the Growth of a Carbide Layer on Silicon From Hydrogen Containing Compounds

2021 · L. K. Orlov, V. I. Vdovin, et al. · Journal of Structural Chemistry · 1

Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

2015 · R. Kh. Zhukavin, K. A. Kovalevsky, et al. · Semiconductors · 1

Mechanisms of a negative differential conductivity in a short-channel In0.52Ga0.48As/In0.53Al0.47As HEMT

2009 · M L Orlov · Journal of Physics Conference Series · 1

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Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel

2008 · M. L. Orlov · Semiconductors · 1

Features of Electron Transport in Two-Dimensional Quantum Superlattices with the Non-Associative Dispersion Law

2021 · M. L. Orlov, L. K. Orlov · Semiconductors

Photoconductivity Resonance Tunneling Spectroscopy of the Electron States in the InAs/GaAs Quantum Dot Heterostructures

2019 · N. L. Ivina, M. L. Orlov, et al. · International Journal of Nanoscience

Электрополевое поведение резонансных особенностей в туннельной составляющей фототока в гетероструктурах InAs(QD)/GaAs

2018 · Л.К. Орлов, Н.С. Волкова, et al. · Физика и техника полупроводников

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Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

2016 · R. Kh. Zhukavin, K. A. Kovalevsky, et al. · Semiconductors

Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level

2014 · M. L. Orlov, Zs. J. Horvath, et al. · Semiconductors

ELECTRONIC TRANSPORT IN HIGHLY DOPED RELAXED Si/Si 1-x Ge x QUANTUM HETEROSTRUCTURES

2013 · L. K. ORLOV, Z. J. HORVATH, et al. · International Conference on Physics, Chemistry and Applications of Nanostructures (Nanomeeting)

Features of Electronic Transport in relaxed Si/Si1-XGeX Heterostructures with High doping level

2013 · Lev K. Orlov, A. A. Mel’nikova, et al. · MRS Proceedings

Works count: 30

Citation count: 180

H-index: 5

I10-index: 4