Work

Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level

Year: 2014

Type: article

Source: Semiconductors

DOI: 10.1134/s106378261407015x

Authors: M. L. Orlov, Zs. J. Horvath, N. L. Ivina, V. N. Neverov, L. K. Orlov

Institutions: Russian Academy of Sciences, Nizhny Novgorod State Technical University, Institute for Physics of Microstructures, Obuda University, M.N. Mikheev Institute of Metal Physics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2074136209

FWCI:

Cites: 22

Cited by:

Related to: 10