Work

Transient enhanced diffusion of As and redistribution of B in As-implanted Silicon

Year: 1999

Type: article

Source: 半導体・集積回路技術シンポジウム講演論文集

Authors: Ryangsu Kim, Xin Xia Jian, Tomoya Saito, Takenori Aoki, Hiroyuki Kobayashi, Yoshikazu Furuta, Yoshinari Kamakura, Kenji Taniguchi

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2588044236

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