Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
Year: 2017
Type: conference-paper
Source: Symposium on VLSI Technology
Authors: N. Breil, A. Carr, T. Kuratomi, C. Lavoie, I.-C. Chen, M. Stolfi, K. D. Chiu, W. Wang, H. Van Meer, S. Sharma, R. Hung, A. Gelatos, J. Jordan-Sweet, E. Levrau, N. Loubet, R. Chao, J. Ye, A. Ozcan, C. Surisetty, M. Chudzik
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2744533017