Work

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Year: 2018

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4997319

Authors: Guijuan Zhao, Lianshan Wang, Huijie Li, Yulin Meng, Fangzheng Li, Shaoyan Yang, Zhanguo Wang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G4170589943

OpenAlex ID: W2787644875

FWCI: 0.739

Cites: 25

Cited by: 16

Related to: 10