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Shaoyan Yang

Competitive growth mechanisms of AlN on Si (111) by MOVPE
2014 · Yuxia Feng, Hongyuan Wei, et al. · Scientific Reports · 62
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Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes
2021 · Weizhen Yao, Lianshan Wang, et al. · CrystEngComm · 28
Dislocation scattering in AlxGa1−xN∕GaN heterostructures
2008 · Xiaoqing Xu, Xianglin Liu, et al. · Applied Physics Letters · 28
Advancements in organic pollutant remediation: The role of nitrogen-doped rGO-CeO2 in photocatalytic efficiency enhancement
2024 · Deyang Ning, Junshan Zhang, et al. · Colloids and Surfaces A Physicochemical and Engineering Aspects · 23
The immiscibility of InAlN ternary alloy
2016 · Guijuan Zhao, Xiaoqing Xu, et al. · Scientific Reports · 19
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Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition
2019 · Fangzheng Li, Lianshan Wang, et al. · Superlattices and Microstructures · 17
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Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface
2013 · Caihong Jia, Yonghai Chen, et al. · Nanoscale Research Letters · 17
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Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure
2018 · Guijuan Zhao, Lianshan Wang, et al. · Applied Physics Letters · 16
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
2011 · Jianming Liu, Xianlin Liu, et al. · Nanoscale Research Letters · 16
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures
2012 · Guipeng Liu, Ju Wu, et al. · Applied Physics Letters · 13
Dislocation core effect scattering in a quasitriangle potential well
2009 · Xiaoqing Xu, Xianglin Liu, et al. · Applied Physics Letters · 13
Investigation of coherency stress-induced phase separation in AlN/Al x Ga 1−x N superlattices grown on sapphire substrates
2020 · Weizhen Yao, Fangzheng Li, et al. · CrystEngComm · 12
Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer
2014 · Yuxia Feng, Hongyuan Wei, et al. · CrystEngComm · 12
Anomalous temperature dependence of photoluminescence from a-C:H film deposited by energetic hydrocarbon ion beam
2002 · Meiyong Liao, Zhihog Feng, et al. · Solid State Communications · 11
Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor
2023 · Huidan Niu, Weizhen Yao, et al. · CrystEngComm · 10
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well
2009 · Jun Wang, Shu-Shen Li, et al. · Nanoscale Research Letters · 10
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Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates
2022 · Wenlong Li, Lianshan Wang, et al. · Nanomaterials · 8
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Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors
2019 · Weizhen Yao, Lianshan Wang, et al. · Semiconductor Science and Technology · 8
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1−xN/GaN multi-quantum wells
2012 · Guipeng Liu, Ju Wu, et al. · Applied Physics Letters · 8
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy
2014 · Susu Kong, Hongyuan Wei, et al. · RSC Advances · 7
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1−xN/GaN heterostructures
2014 · Yuxia Feng, Guipeng Liu, et al. · Semiconductor Science and Technology · 7
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures
2011 · Guipeng Liu, Ju Wu, et al. · Journal of Applied Physics · 7
Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3−x film
2003 · Jian-Ping Zhou, Chun-Lin Chai, et al. · Journal of Crystal Growth · 7
MOCVD growth of ZrN thin films on GaN/Si templates and the effect of substrate temperature on growth mode, stress state, and electrical properties
2022 · Qingqing Chen, Shaoyan Yang, et al. · Journal of Physics D Applied Physics · 6
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Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers
2018 · Lianshan Wang, Guijuan Zhao, et al. · Journal of Nanoscience and Nanotechnology · 6
Works count: 53
Citation count: 428
H-index: 12
I10-index: 16
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