Work

Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes

Year: 2021

Type: article

Source: CrystEngComm

DOI: 10.1039/d0ce01769h

Authors: Weizhen Yao, Lianshan Wang, Yulin Meng, Shaoyan Yang, Xianglin Liu, Huidan Niu, Zhanguo Wang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G630098945, G6348322360, G820261701

OpenAlex ID: W3127075349

FWCI: 1.646

Cites: 47

Cited by: 28

Related to: 10