Work

Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon

Year: 2018

Type: article

Source: Chemistry of Materials

DOI: 10.1021/acs.chemmater.8b00017

Authors: Eric Stevens, Yoann Tomczak, B. T. Chan, Efrain Altamirano Sanchez, Gregory N. Parsons, Annelies Delabie

Institutions: North Carolina State University, IMEC, KU Leuven

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2803040449

FWCI: 4.299

Cites: 39

Cited by: 82

Related to: 10