Year: 2019
Type: article
Abstract: Hydrogen in oxide systems plays a very important role in determining the major physical characteristics of such systems. In this study, we investigated the effect of hydrogen in oxide host systems for various oxygen environments that acted as amorphous oxide semiconductors. The oxygen environment in the sample was controlled by the oxygen gas partial pressure in the radio-frequency-sputtering process. It was confirmed that the hydrogen introduced by the passivation layer not only acted as a “killer” of oxygen deficiencies but also as the “creator” of the defects depending on the density of oxide states. Even if hydrogen is not injected, its role can change owing to unintentionally injected hydrogen, which leads to conflicting results. We discuss herein the correlation with hydrogen in the oxide semiconductor with excess or lack of oxygen through device simulation and elemental analysis.
Source: Crystals
DOI: 10.3390/cryst9020075
Institution: Daegu Gyeongbuk Institute of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,418
Awards: G5716771618, G5936513432
OpenAlex ID: W2913610773