Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
Year: 2019
Type: article
Institutions: Hanyang University, Dongguk University, LG (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funders: Ministry of Knowledge Economy, LG Display
Award: G8500495120
OpenAlex ID: W2919829809