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A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

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Year: 2019
Type: article
Source: IEEE Journal of Solid-State Circuits
DOI: 10.1109/jssc.2019.2930910
Authors: Masanori Natsui, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa
Institutions: Tohoku University, Center for Innovative Integrated Electronic Systems, Tohoku University
Language: English

Topic: Low-power high-performance VLSI design
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Japan Society for the Promotion of Science
Awards: VLSI platform with intelligent environment adaptation technology and its application to highly reliable brain LSI systems, Development of fully autonomous error-correctable VLSI design technology and its application to brain-inspired LSI system
OpenAlex ID: W2967487348
FWCI: 2.799
Cites: 49
Cited by: 68
Related to: 10
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