Work

Diffusion control of n-type dopants in Ge with high activation using co-implantation and flash lamp annealing

Year: 2019

Type: article

Source: The Japan Society of Applied Physics

Authors: Hideaki Tanimura, Hikaru Kawarazaki, Takayuki Aoyama, Shinichi Kato, Yoshihide Nozaki, Ryota Wada, Takahiro Higuchi, Tsutomu Nagayama, T. Kuroi

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2969701367

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