Work

Single event sensitivity analysis of bandgap reference

Year: 2018

Type: article

Abstract: Based on the conventional design of bandgap reference using 0.18 μm process, the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers. The vertical type PNP transistor used in the bandgap reference was modeled using TCAD software, and its single event sensitivity in the bandgap reference source was verified by simulation. In the end, the radiation hardened bandgap reference was proposed.

Source: DOAJ (DOAJ: Directory of Open Access Journals)

DOI: 10.16157/j.issn.0258-7998.183103

Authors: Sui Chenglong, Han Xupeng, Wang Liang, Liu Jiaqi, Li Tongde, Cao Weiyi, Zhao Yuanfu

Institution: Beijing Microelectronics Technology Institute

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W3091978992

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