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The effect of boron doping on the thermal behaviour of EOR defects in Silicon

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Year: 1996
Type: book-chapter
Source: Elsevier eBooks
DOI: 10.1016/b978-0-444-82334-2.50151-9
Authors: C. Bonafos, L. Laânab, M.M. Faye, D. Alquıer, A. Martinez, D. Mathiot, A. Claverie
Institutions: Centre National de la Recherche Scientifique, Centre d’Élaboration de Matériaux et d’Études Structurales, Mohammed V University, Cheikh Anta Diop University, Laboratoire d'Analyse et d'Architecture des Systèmes, Orange (France)
Language: English

Topic: Semiconductor materials and interfaces
Subfield: Electronic, Optical and Magnetic Materials
Field: Materials Science
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W33630165
FWCI:
Cites: 12
Cited by:
Related to: 10
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