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M. M. Faye

Observed names: M.M. Faye, Mansour M Faye, Mansour M. Faye, Mansour Mouhamadou Faye, Mouhamadou Mansour Faye
OpenAlex ID: A5113007917
Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment
1994 · B. de Mauduit, L. Laânab, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 70
Solitonlike excitations in a one-dimensional electrical transmission line
2005 · François B. Pelap, Mansour M. Faye · Journal of Mathematical Physics · 48
A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters
1992 · L. Laanab, C. Bergaud, et al. · MRS Proceedings · 25
Modulational instability and exact solutions of the modified quintic complex Ginzburg–Landau equation
2004 · François B Pelap, Mansour M Faye · Journal of Physics A Mathematical and General · 14
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Transient enhanced diffusion of dopant in preamorphised Si: the role of EOR defects
1995 · C. Bonafos, A. Martinez, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 14
Higher Order Solitons in an Electrical Lattice
2007 · Francois Beceau Pelap, Mansour Mouhamadou Faye · Journal of the Physical Society of Japan · 12
Soliton-like excitations in the one-dimensional electrical transmission line
2005 · F. B. Pelap, M. M. Faye · Nonlinear oscillations · 9
Two-dimensional damage distribution induced by ion implantation in Si under arbitrarily shaped mask edges: Simulations and cross-sectional transmission electron microscopy observations
1992 · M. M. Faye, J. Beauvillain, et al. · Journal of Applied Physics · 8
Experimental study of the Fermi–Pasta–Ulam recurrence in a bi-modal electrical transmission line
2013 · Abdou K Farota, Mansour M Faye · Physica Scripta · 5
A Modified Stability Criterion for Envelope Equations
2005 · François B Pelap, Mansour M Faye · Physica Scripta · 5
Simulation of lateral Al recoil atoms and damage defects gradients in a GaAs/GaAlAs quantum well created by masked ion implantation
1993 · M.M. Faye, C. Vieu, et al. · Materials Science and Engineering B · 5
Lateral damage extension during masked ion implantation into GaAs
1996 · M. M. Faye, C. Vieu, et al. · Journal of Applied Physics · 4
Temperature Dependence of the Kinetics of Silicon Amorphization by He Ion Implantation
1992 · L. Laânab, A. Roumili, et al. · MRS Proceedings · 3
Wave dynamics in a modified quintic complex Ginzburg–Landau system
2009 · François B. Pelap, Jules H. Kamga, et al. · Physics Letters A · 2
Stability of bright solitons in some physical systems
2007 · François B Pelap, Pierre K Talla, et al. · Physica Scripta · 2
Experimental Studies of the Electrical Nonlinear Bimodal Transmission Line
2018 · Abdou Karim Farota, Mouhamadou Mansour Faye, et al. · InTech eBooks · 1
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Computer simulation of some aspects of ion implantation in ULSI devices
1997 · M. M. Faye, G. Benassayag, et al. · Radiation effects and defects in solids · 1
Two-Dimensional Damage Distributions Induced by Localized Ion Implantations
1992 · M. M. Faye, L. Laanab, et al. · MRS Proceedings · 1
Stability of shock waves in the modified quintic complex Ginzburg-Landau equation
2007 · F. B. Pelap, A. J. Kenfack, et al. · Nonlinear oscillations
On the Exact Solutions of the Generalized Gradov–Stenflo Equation
2003 · François B Pelap, Mansour M Faye · Physica Scripta
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Stoichiometric disturbances in multi-atomic multilayered structures due to ion implantation through mask openings
1996 · M.M. Faye, A. Altibelli, et al. · Materials Science and Engineering B
The effect of boron doping on the thermal behaviour of EOR defects in Silicon
1996 · C. Bonafos, L. Laânab, et al. · Elsevier eBooks
Transient enhanced diffusion of dopant in preamorphised Si: the role of EOR defects
1996 · C. Bonafos, A. Martinez, et al. · Elsevier eBooks
Stoichiometric disturbances in multi-atomic multilayered structures due to ion implantation through mask openings
1996 · M.M. Faye, A. Altibelli, et al. · Elsevier eBooks
Simulation of lateral Al recoil atoms and damage defects gradients in a GaAs/GaAlAs quantum well created by masked ion implantation
1993 · M.M. Faye, C. Vieu, et al. · European Materials Research Society symposia proceedings
Works count: 26
Citation count: 229
H-index: 8
I10-index: 6
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