Work

Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Simulation, Size Dependence, and Hot Carrier Stress

Year: 2007

Type: conference-abstract

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2006.p-3-3

Authors: Yao-Jen Lee, Chia-Hao Fan, Wen-Yan Lin, Chia-Chen Wan, Bohr-Ran Huang, Wen-Luh Yang, Tien-Sheng Chao, D. S.Chuu

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W357049581

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