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Chia-Chen Wan
Institution:
National Yang Ming Chiao Tung University
Observed institution:
National Yang Ming Chiao Tung University
OpenAlex ID:
A5111992436
Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
2014
·
Chung-Wei Hsu
, Yu-Fen Wang
, et al.
·
Nanotechnology
·
91
3D vertical TaOx/TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current
2013
·
Chung-Wei Hsu
, Chia-Chen Wan
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
34
3D 65nm CMOS with 320°C microwave dopant activation
2009
·
Yao-Jen Lee
, Yu-Lun Lu
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
10
Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping
2021
·
Shu-Han Hsu
, Chia-Chen Wan
, et al.
·
ACS Omega
·
7
Suspended Ge gate-all-around nanowire nFETs with junction isolation on bulk Si
2016
·
Chia-Chen Wan
, Guang-Li Luo
, et al.
·
IEEE Silicon Nanoelectronics Workshop
·
1
High-Stability and High-Charge-Density HfZrO 2 MFM Capacitors With In Situ CF 4 Plasma at TiN Electrode
2026
·
Dong-Ru Hsieh
, Yi-Hsiu Chen
, et al.
·
IEEE Transactions on Electron Devices
Low Power HfZrO 2 FeRAMs With In-Situ CF 4 Plasma Treatment at TiN Bottom Electrode Featuring Superior Endurance and Robust Retention for Embedded NVMs
2026
·
Dong-Ru Hsieh
, Yi-Hsiu Chen
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
3D 65nm CMOS with 320 degrees C Microwave Dopant Activation
2009
·
Yao‐Jen Lee
, Yu‐Lun Lu
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
Reliability of strained-channel NMOSFETs with SiN capping layer on hi-wafers with a thin LPCVD-TEOS buffer layer
2007
·
Tzu-I Tsai
, Yao-Jen Lee
, et al.
·
International Semiconductor Device Research Symposium
Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layer
2007
·
Tzu-I Tsai
, Yao-Jen Lee
, et al.
·
International Semiconductor Device Research Symposium
Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Simulation, Size Dependence, and Hot Carrier Stress
2007
·
Yao-Jen Lee
, Chia-Hao Fan
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
11
Citation count:
143
H-index:
4
I10-index:
3
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