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Threshold Voltage Instability and Charge Retention in Nonvolatile Memory Cell with Nitride/Oxide Double-Layered Inter-poly Dielectric

Year: 1991

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps.1991.363230

Authors: Seiichi Moon, Eiji Sakagami, Yukio Kaneko, Yoichi Ohshima, Norihisa Arai, Kuniyoshi Yoshikawa

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4235443333

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