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Y. Ohshima

Observed names: Yoichi OHSHIMA, Yoichi Ohshima
Institution: Toshiba (Japan)
OpenAlex ID: A5113512608
Degradation mechanism of flash EEPROM programming after program/erase cycles
2002 · S. Yamada, Y. Hiura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 71
ONO inter-poly dielectric scaling for nonvolatile memory applications
1991 · S. Mori, E. Sakagami, et al. · IEEE Transactions on Electron Devices · 59
A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation
1994 · S. Atsumi, M. Kuriyama, et al. · IEEE Journal of Solid-State Circuits · 44
A study of the effects of BGA solder geometry on fatigue life and reliability assessment
2002 · Q. Yu, M. Shiratori, et al. · I-THERM :/I-THERM - Intersociety Conference on Thermal Phenomena in Electronic Systems · 36
Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors
2002 · K. Yoshikawa, S. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
Reliability study of thin inter-poly dielectrics for non-volatile memory application
2002 · S. Mori, Y. Kaneko, et al. · IEEE International Reliability Physics Symposium proceedings · 22
Flip chip underfill reliability of CSP during IR reflow soldering
2002 · Y. Ohshima, T. Nakazawa, et al. · IEEE International Reliability Physics Symposium proceedings · 14
Bottom-oxide scaling for thin nitride/oxide interpoly dielectric in stacked-gate nonvolatile memory cells
1992 · S. Mori, E. Sakagami, et al. · IEEE Transactions on Electron Devices · 12
A 62ns 16Mb CMOS EPROM With Address Transition Detection Technique
1991 · N. Ohtsuka, J. Miyamoto, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 11
Flash EEPROM Cell scaling based on tunnel oxide thinning limitations
1991 · K. Yosbikawa, S. Mori, et al. · Symposium on VLSI Technology · 10
0.6 mu m EPROM cell design based on a new scaling scenario
2003 · K. Yoshikawa, S. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Process and device technologies for 16 Mbit EPROMs with large-tilt-angle implanted p-pocket cell
2002 · Y. Ohshima, S. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
A flash EEPROM cell scaling including tunnel oxide limitations
1990 · Kuniyoshi Yoshikawa, Seiichi Mori, et al. · European Solid-State Device Research Conference · 8
A reliable profiled lightly doped drain (PLD) cell for high-density submicrometer EPROM's and flash EEPROM's
1990 · K. Yoshikawa, M. Sato, et al. · IEEE Transactions on Electron Devices · 6
An asymmetrical lightly doped source cell for virtual ground high-density EPROMs
1990 · K. Yoshikawa, S. Mori, et al. · IEEE Transactions on Electron Devices · 6
A 68-ns 4-Mbit CMOS EPROM with high-noise-immunity design
1990 · K. Imamiya, J. Miyamoto, et al. · IEEE Journal of Solid-State Circuits · 5
An asymmetrical lightly-doped source (ALDS) cell for virtual ground high density EPROMs
2003 · K. Yoshikawa, S. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Threshold voltage instability and charge retention in nonvolatile memory cell with nitride/oxide double-layered inter-poly dielectric
2002 · S. Mori, E. Sakagami, et al. · IEEE International Reliability Physics Symposium proceedings · 3
Reliability study of thin inter-poly dielectrics for non-volatile nemory application
1990 · Seiichi Mori, Yukio Kaneko, et al. · IEEE International Reliability Physics Symposium proceedings · 3
A 3.3 V operation nonvolatile memory cell technology
2003 · K. Yoshikawa, E. Sakagami, et al. · Symposium on VLSI Technology · 2
A Reliable Profiled Lightly-Doped Drain(PLD) Cell for High Density Submicron EPROMS and Flash EEPROMS
1988 · Kuniyoshi YOSHIKAWA, Masaki SATO, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
A new MOSFETs degradation induced by gate current in off-state condition
1990 · K. Yoshikawa, N. Arai, et al. · Symposium on VLSI Technology · 1
Reliable contact metallization technology with Al-Si-Cu/TiN/Ti system for CMOS VLSIs
2003 · Y. Ohshima, S. Mori, et al. · International IEEE VLSI Multilevel Interconnection Conference
Comparison of Current Flash EEPROM Erasing Methods: Stability and How to control
1992 · Kuniyoshi Yoshikawa, Seiji Yamada, et al.
Threshold Voltage Instability and Charge Retention in Nonvolatile Memory Cell with Nitride/Oxide Double-Layered Inter-poly Dielectric
1991 · Seiichi Moon, Eiji Sakagami, et al. · IEEE International Reliability Physics Symposium proceedings
Works count: 25
Citation count: 360
H-index: 10
I10-index: 10
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