A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation
Year: 1994
Type: article
DOI: 10.1109/4.280696
Authors: S. Atsumi, M. Kuriyama, A. Umezawa, H. Banba, K. Naruke, S. Yamada, Y. Ohshima, M. Oshikiri, Y. Hiura, T. Yamane, K. Yoshikawa
Institutions: Toshiba (Japan), Toshiba Electronic Device Solutions (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2118252000