Author

Kazuhiko Yoshikawa

Observed names: K. Yoshikawa, Kazuhiko YOSHIKAWA

Observed institutions: Toshiba (Japan), Toshiba (South Korea), Toshiba Lighting & Technology Corporation (Japan), Institute of Laser Engineering, The University of Osaka, The University of Osaka

OpenAlex ID: A5109112901

Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices

1996 · S. Mori, Y.Y. Araki, et al. · IEEE Transactions on Electron Devices · 80

Degradation mechanism of flash EEPROM programming after program/erase cycles

2002 · S. Yamada, Y. Hiura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 71

ONO inter-poly dielectric scaling for nonvolatile memory applications

1991 · S. Mori, E. Sakagami, et al. · IEEE Transactions on Electron Devices · 59

Anomalous effects on hot-electron transport and ablation structure

1981 · T. Yabe, K. Mima, et al. · Nuclear Fusion · 59

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation

1994 · S. Atsumi, M. Kuriyama, et al. · IEEE Journal of Solid-State Circuits · 44

Polyoxide thinning limitation and superior ONO interpoly dielectric for nonvolatile memory devices

1991 · S. Mori, N. Arai, et al. · IEEE Transactions on Electron Devices · 34

Ablation Nonuniformity on Laser Irradiated Pellet and Collisional Hot Electron Filamentation

1980 · Takayasu Mochizuki, Takashi Yabe, et al. · Japanese Journal of Applied Physics · 25

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Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors

2002 · K. Yoshikawa, S. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24

Reliability study of thin inter-poly dielectrics for non-volatile memory application

2002 · S. Mori, Y. Kaneko, et al. · IEEE International Reliability Physics Symposium proceedings · 22

Hot-Electron Filamentation due to Self-Induced Magnetic Fields

1982 · T. Yabe, K. Mima, et al. · Physical Review Letters · 16

A 4-Mbit CMOS EPROM

1987 · N. Ohtsuka, S. Tanaka, et al. · IEEE Journal of Solid-State Circuits · 15

Impact of cell threshold voltage distribution in the array of flash memories on scaled and multilevel flash cell design

2002 · K. Yoshikawa · Symposium on VLSI Technology · 14

Novel process and device technologies for submicron 4Mb CMOS EPROMs

1987 · S. Mori, N. Matsukawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13

Bottom-oxide scaling for thin nitride/oxide interpoly dielectric in stacked-gate nonvolatile memory cells

1992 · S. Mori, E. Sakagami, et al. · IEEE Transactions on Electron Devices · 12

New interconnect plasma induced damage analyzed by flash memory cell array

2002 · M. Takebuchi, K. Yamada, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11

A 62ns 16Mb CMOS EPROM With Address Transition Detection Technique

1991 · N. Ohtsuka, J. Miyamoto, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 11

Fast Programmable 256K Read Only Memory with On-Chip Test Circuits

1985 · S. Atsumi, S. Tanaka, et al. · IEEE Journal of Solid-State Circuits · 11

Reliable CVD Inter-Poly Dielectrics for Advanced E&EEPROM

1985 · Seiichi Mori, Y. Mikata, et al. · Symposium on VLSI Technology · 11

0.6 mu m EPROM cell design based on a new scaling scenario

2003 · K. Yoshikawa, S. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9

Process and device technologies for 16 Mbit EPROMs with large-tilt-angle implanted p-pocket cell

2002 · Y. Ohshima, S. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9

The impact of intermetal dielectric layer and high temperature bake test on the reliability of nonvolatile memory devices

1994 · E. Sakagami, N. Arai, et al. · IEEE International Reliability Physics Symposium proceedings · 9

A programmable 80ns 1Mb CMOS EPROM

1985 · S. Saito, S. Tanaka, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 9

Poly-Oxide/Nitride/Oxide Structures for Highly Reliable EPROM Cells

1984 · Seiichi Mori, Masaki Sato, et al. · Symposium on VLSI Technology · 9

Embedded flash memories-technology assessment and future

2003 · K. Yoshikawa · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 8

A programmable 256K CMOS EPROM with on-chip test circuits

1984 · S. Tanaka, S. Atsumi, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 8

Works count: 64

Citation count: 656

H-index: 13

I10-index: 18