Threshold voltage instability and charge retention in nonvolatile memory cell with nitride/oxide double-layered inter-poly dielectric
Year: 2002
Type: conference-paper
Authors: S. Mori, E. Sakagami, Y. Kaneko, Y. Ohshima, N. Arai, K. Yoshikawa
Institutions: Toshiba (Japan), Toshiba Electronic Device Solutions (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1929610337