Work

(Invited) Charge Trapping Type SOI-FinFET Flash Memory

Year: 2014

Type: conference-abstract

Source: ECS Meeting Abstracts

DOI: 10.1149/ma2014-01/36/1373

Authors: Yongxun Liu, T Nabatame, T Matsukawa, K Endo, S O'uchi, J Tsukada, H Yamauchi, Y Ishikawa, W Mizubayashi, Y Morita, S Migita, H Ota, T Chikyow, M Masahara

Institutions: National Institute of Advanced Industrial Science and Technology, National Institute for Materials Science

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4244922263

Cites:

Cited by: 1

Related to: 10