Work

The Detailed Analysis of Diffusion Behavior of implanted ions in 4H-SiC

Year: 2023

Type: conference-paper

Source: International Workshop on Junction Technology

DOI: 10.23919/iwjt59028.2023.10175174

Authors: Ryota Wada, Tsutomu Nagayama, Takashi Kuroi, Nariaki Hamamoto

Institution: Nissin Ion Equipment Co., Ltd. (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4384009232

FWCI:

Cites: 8

Cited by:

Related to: 10