Work

Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

Year: 2023

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.23919/sispad57422.2023.10319506

Authors: T. Reiter, A. Toifl, A. Hössinger, L. Filipovic

Institutions: TU Wien, Silvaco (United Kingdom)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4388820573

FWCI: 0.448

Cites: 12

Cited by: 1

Related to: 10