Work

Synergetic FeRAM/OxRAM memory array operation induced by oxygen vacancy interface engineering in Si:HfO2 ferroelectric films

Year: 2023

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2023.k-7-04

Authors: Laurent Grenouillet, Simon Martin, Julie Laguerre, Justine Barbot, Nicolas Vaxelaire, Pierre-Marie Deleuze, Olivier Renault, Rabah Kies, Catherine Carabasse, Pattamon Dezest, Francois Aussenac, Richard Souil, Olivier Billoint, Elisa Vianello, Wassim Hamouda, Nick Barrett, Fracois Andrieu, Jean Coignus

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4390767017

FWCI: 0.896

Cites:

Cited by: 2

Related to: 10