Work

Reducing Side Cutting During Wet Etching of Gate Oxide Layer for 28HK Metal Gate Process

Year: 2024

Type: conference-paper

Source: China Semiconductor Technology International Conference (CSTIC)

DOI: 10.1109/cstic61820.2024.10532020

Authors: Chunshan Zhao, Wei Zhou, Xiaolin Xu, Yamin Cao, Yansheng Wang

Institution: Shanghai Huali Microelectronics (China)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4398225152

FWCI:

Cites: 4

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Related to: 10