Work

Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3435174

Authors: Ruohong Duan, Zhixiang Zou, Zhong Xu, Haoxiong Zhang, Xibin Shao, Deming Zhang, Zhangtao Wang, Lang Zeng

Institutions: Beihang University, BOE Technology Group (China)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Municipal Natural Science Foundation

Awards: G1044640108, G2076157035, 面向端侧人工智能物联网（AIoT）的高效自旋存算一体芯片, G6737709517, G942610218

OpenAlex ID: W4401358296

FWCI:

Cites: 35

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Related to: 10