Work

Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a -IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3450659

Authors: Gwang-Bok Kim, Se Eun Kim, Yena Kim, Kyeong-Seok Son, Joon Seok Park, Sunhee Lee, Jae Kyeong Jeong

Institutions: Hanyang University, Samsung (South Korea), Samsung Display (South Korea)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Ministry of Science and ICT, South Korea, Samsung Display

OpenAlex ID: W4401908498

FWCI: 1.047

Cites: 28

Cited by: 11

Related to: 10