A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput
Year: 2025
Type: conference-paper
Authors: Wanik Cho, Chanhui Jeong, Jongwoo Kim, Jongseok Jung, Keunseon Ahn, Jayoon Goo, Sangkyu Lee, Kayoung Cho, Tei Cho, Dauni Kim, Gwan Park, Yushin Ahn, Sooyeol Chai, Gwihan Ko, Sunyoung Jung, Eunwoo Jo, Taehun Park, Jinhyun Ban, Cheoljoong Park, Jae Hyun Park, Sanghoon Oh, Sojin Jeong, Youngjun Kwak, Kyungsoo Jeong, Jinyeop Kim, Minchol Shin, Eunho Yang, Taisik Shin, Youngil Kim, Jiseong Mun, Chanyang Ryu, Huihyeon Park, Changwan Ha, Jong Tai Park, Peng Zhang, Sooyong Park, Rezaul Haque, Hang Tian, Sunghwa Ok, Wonbeom Choi, Junyoun Lim, Dongkyu Yoon, Sechun Park, Wonsun Park, Kichang Gwon, Seungpil Lee, Hwang Huh, Woopyo Jeong, Jungdal Choi
Institutions: SK Hynix (South Korea), SK Group (United States)
Language: English
Subfield: Computer Networks and Communications
Field: Computer Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408181990