Work

Tunneling Effective Mass of Electrons in Lightly N-Doped $\hbox{SiO}_{x} \hbox{N}_{y}$ Gate Insulators

Year: 2008

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2008.927806

Authors: E. Nadimi, C. Golz, M. Trentzsch, L. Herrmann, K. Wieczorek, C. Radehaus

Institutions: Chemnitz University of Technology, Technische Universität Dresden

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W64216358

FWCI: 2.041

Cites: 31

Cited by: 14

Related to: 10