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Lutz Herrmann
Observed name:
L. Herrmann
Institution:
GlobalFoundries (Germany)
Observed institution:
GlobalFoundries (Germany)
OpenAlex ID:
A5048989014
Tunneling Effective Mass of Electrons in Lightly N-Doped $\hbox{SiO}_{x} \hbox{N}_{y}$ Gate Insulators
2008
·
E. Nadimi
, C. Golz
, et al.
·
IEEE Transactions on Electron Devices
·
14
Process Integration Issues with Spike, Flash and Laser Anneal Implementation for 90 and 65 NM Technologies
2006
·
Th. Feudel
, M. Horstmann
, et al.
·
International Conference on Advanced Thermal Processing of Semiconductors
·
10
Temperature scaling for 35nm gate length high-performance CMOS
2004
·
Th. Feudel
, M. Horstmann
, et al.
·
Materials Science in Semiconductor Processing
·
3
Comparison of MOCVD- and ALD-Deposited $ \hbox{HfZrO}_{4}$ Gate Dielectrics for 32-nm High-Performance Logic SOI CMOS Technologies
2010
·
Torben Kelwing
, Andreas Naumann
, et al.
·
IEEE Electron Device Letters
·
2
Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm CMOS High Performance Logic SOI Technologies
2010
·
Torben Kelwing
, Sergej Mutas
, et al.
·
ECS Transactions
·
1
PDF
Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32nm high-performance SOI CMOS technologies
2010
·
T. Kelwing
, A. Naumann
, et al.
·
Microelectronic Engineering
·
1
Application of fast wafer-level reliability PBTI tests for screening of High-k / Metal Gate process splits
2009
·
G. Krause
, R. Geilenkeuser
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
1
Reliability response of plasma nitrided gate dielectrics to physical and electrical CET-scaling
2005
·
R. Geilenkeuser
, K. Wieczorck
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
1
Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology
2005
·
R. Geilenkeuser
, K. Wieczorek
, et al.
·
Materials Science and Engineering B
·
1
Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm High Performance Logic CMOS SOI Technologies
2010
·
Torben Kelwing
, Andreas Naumann
, et al.
·
ECS Meeting Abstracts
PDF
Impact of solid phase epitaxial regrowth on device performance for non-diffusive flash-annealed 45nm SOI-MOSFETs
2007
·
R. Illgen
, T. Feudel
, et al.
·
International Semiconductor Device Research Symposium
Influence Of Energy Contamination At S/D-Extension Dopant Implantation Using Ultra Fast Annealing
2006
·
Marc Herden
, Daniel Gehre
, et al.
·
AIP conference proceedings
Novel approaches to improve laser annealed SOI-MOSFETs
2005
·
T. Herrmann
, Th. Feudel
, et al.
·
Materials Science and Engineering B
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Works count:
13
Citation count:
34
H-index:
3
I10-index:
2
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